Saratoga, CA, United States of America

Michael Allen Van Buskirk

This inventor holds 77 USPTO granted patents and 2 published patent applications and 3 EPO patents, primarily in NAND Memory Technology (CPC class H01L). Top assignees: Advanced Micro Devices Corporation, Micron Technology Incorporated, Adesto Technologies Corporation. Active years: 1984-2021.

USPTO Granted Patents = 77 

% Patents Active = 84.4

 

Average Co-Inventor Count = 2.7

ph-index = 25

Forward Citations = 2,114(Granted Patents)

Forward Citations (Not Self Cited) = 2,083(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • San Jose, CA (US) (1984 - 1997)
  • Santa Clara, CA (US) (2016)
  • Saratoga, CA (US) (1998 - 2021)

Company Filing History:


Years Active: 1984-2021

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Areas of Expertise:
NAND Memory Cell
Resistive Memory
Programmable Impedance
Memory Device
Semiconductor
Memory Retention
Flash Memory
Variable Impedance
Biasing Techniques
Latch Circuits
Memory Arrays
Capacitance Measurement
77 patents (USPTO):Explore Patents

Title: Michael Allen Van Buskirk: Innovator in Memory Technology

Introduction

Michael Allen Van Buskirk is a prolific inventor based in Saratoga, CA, with an impressive portfolio of 76 patents that showcase his contributions to the field of memory technology. His innovative designs and patents play a significant role in the advancement of electronic components, particularly in memory devices.

Latest Patents

Among his latest patents, Van Buskirk developed a "NAND memory cell string having a stacked select gate structure and process for forming same." This invention discloses a memory string that includes a series of core cells connected between a source select gate and a drain select gate along a channel. Each core cell features a wordline separated from the channel by a stack of layers that includes a charge trapping layer. A notable aspect is the stacked select gate, which consists of multiple components that enhance the device's performance.

Another recent patent is for a "memory device having programmable impedance elements with a common conductor formed below bit lines." This integrated circuit device includes a multitude of access transistors with control terminals linked to wordlines, alongside two-terminal programmable impedance elements situated over the substrate. The innovative design allows for improved data storage and accessibility through advanced conductive plate structures and bit lines.

Career Highlights

Throughout his career, Van Buskirk has significantly impacted leading technology firms, particularly at Advanced Micro Devices Corporation and Micron Technology Incorporated. His work has consistently revolved around enhancing memory technologies, resulting in groundbreaking patents that further the capabilities of electronic devices.

Collaborations

Van Buskirk has collaborated with notable professionals in the industry, including Chung K. Chang and Lee Edward Cleveland. These collaborations have fostered a productive environment for innovation, leading to several advancements in memory technologies and related fields.

Conclusion

Michael Allen Van Buskirk stands out as a forward-thinking inventor whose contributions continue to shape the landscape of memory technology. With 76 patents to his name, his work exemplifies the spirit of innovation that drives the electronics industry forward. His latest inventions pave the way for more efficient and effective memory devices, reflecting his pivotal role in advancing technology.

Profile summary based on public USPTO records.
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