The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 13, 2019

Filed:

Mar. 16, 2018
Applicant:

4d-s, Ltd., Perth, AU;

Inventors:

Seshubabu Desu, Fremont, CA (US);

Michael Van Buskirk, Saratoga, CA (US);

Assignee:

4D-S, LTD., Perth, AU;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/267 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1233 (2013.01); G11C 13/004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0069 (2013.01); H01L 45/08 (2013.01); H01L 45/1246 (2013.01); H01L 45/1266 (2013.01); H01L 45/147 (2013.01); H01L 45/1608 (2013.01); G11C 2013/009 (2013.01); G11C 2013/0045 (2013.01); G11C 2213/13 (2013.01); G11C 2213/31 (2013.01); G11C 2213/51 (2013.01); G11C 2213/52 (2013.01); G11C 2213/55 (2013.01);
Abstract

A memory device is disclosed. The memory device includes a bottom electrode. The memory device also includes a memory layer connected to the bottom electrode, where the memory layer has a variable resistance. The memory device also includes a conductive top electrode on the memory layer, where the top electrode and the memory layer cooperatively form a heterojunction memory structure. The memory device also includes a retention layer between the memory layer and the top electrode, where the retention layer has a variable ionic conductivity, where the retention layer is configured to selectively resist ionic conduction, and where the resistivity of the retention layer is less than 1×10-4 ohm-m.


Find Patent Forward Citations

Loading…