The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 2007
Filed:
Jan. 12, 2005
Zhida Lan, Cupertino, CA (US);
Michael A. Van Buskirk, Saratoga, CA (US);
Tzu-ning Fang, Palo Alto, CA (US);
Colin Bill, Cupertino, CA (US);
John S. Ennals, Cupertino, CA (US);
Zhida Lan, Cupertino, CA (US);
Michael A. Van Buskirk, Saratoga, CA (US);
Tzu-Ning Fang, Palo Alto, CA (US);
Colin Bill, Cupertino, CA (US);
John S. Ennals, Cupertino, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
An organic memory device comprising two electrodes having a selectively conductive decay media between the two electrodes provides a capability to control a persistence level for information stored in an organic memory cell. A resistive state of the cell controls a conductive decay rate of the cell. A high and/or low resistive state can provide a fast and/or slow rate of conductive decay. One aspect of the present invention can have a high resistive state equating to an exponential conductive decay rate. Another aspect of the present invention can have a low resistive state equating to a logarithmic conductive decay rate. Yet another aspect relates to control of an organic memory device by determining a power state and setting a resistive state of an organic memory cell based upon a current power state and/or an imminent power state.