The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Oct. 31, 2006
Applicants:
Tzu-ning Fang, Palo Alto, CA (US);
Swaroop Kaza, Santa Clara, CA (US);
An Chen, Sunnyvale, CA (US);
Sameer Haddad, San Jose, CA (US);
Inventors:
Tzu-Ning Fang, Palo Alto, CA (US);
Swaroop Kaza, Santa Clara, CA (US);
An Chen, Sunnyvale, CA (US);
Sameer Haddad, San Jose, CA (US);
Assignee:
Spansion LLC, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of providing an operating characteristic of a resistive memory device, material of an electrode thereof is selected to in turn provide a selected operating characteristic of the device. The material of the electrode may be reacted with material of an insulating layer of the resistive memory device to form a reaction layer, the selected operating characteristic being dependent on the presence of the reaction layer.