The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 27, 2010
Filed:
Oct. 30, 2007
Tzu-ning Fang, Palo Alto, CA (US);
Steven Avanzino, Cupertino, CA (US);
Swaroop Kaza, Sunnyvale, CA (US);
Dongxiang Liao, Sunnyvale, CA (US);
Christie Marrian, San Jose, CA (US);
Sameer Haddad, San Jose, CA (US);
Tzu-Ning Fang, Palo Alto, CA (US);
Steven Avanzino, Cupertino, CA (US);
Swaroop Kaza, Sunnyvale, CA (US);
Dongxiang Liao, Sunnyvale, CA (US);
Christie Marrian, San Jose, CA (US);
Sameer Haddad, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
The present method provides annealing of a resistive memory device so as to provide that the device in its erased state has a greatly increased resistance as compared to a prior art approach. The annealing also provides that the device may be erased by application of any of a plurality of electrical potentials within an increased range of electrical potentials as compared to the prior art.