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Yokkaichi, Japan

Tatsufumi Hamada

USPTO Granted Patents = 15 (Patent Applications = 5)

Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 8(Granted Patents)

Location History:

Yokkaichi, JP (2017 - 2019)
Nagoya Aichi, JP (2021 - 2024)
Nagoya, JP (2022 - 2024)
Aichi, JP (2024)

Company Filing History:

10 out of 2,730

Kioxia Corporation

Toshiba Memory Corporation

Years Active: 2017-2025

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15 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12464722 - Three-dimensional type NAND memory device (2025-11-04),

2. 12274059 - Semiconductor storage device and method of manufacturing semiconductor storage device (2025-04-08),

3. 12041778 - Semiconductor storage device and method for manufacturing semiconductor storage device (2024-07-16),

4. 12004349 - Semiconductor device and method for manufacturing the same (2024-06-04),

5. 11950414 - Memory device (2024-04-02),

6. 11854971 - Semiconductor storage device and manufacturing method thereof (2023-12-26),

7. 11791279 - Semiconductor device with hybrid channel (2023-10-17),

8. 11587942 - Semiconductor memory device (2023-02-21),

9. 11296111 - Semiconductor memory device and manufacturing method of semiconductor memory device (2022-04-05),

10. 11282853 - Semiconductor memory device (2022-03-22),

11. 11158649 - Semiconductor storage device with columnar body having impurity containing channel film (2021-10-26),

12. 10276590 - Method for manufacturing a semiconductor device including a vertical channel between stacked electrode layers and an insulating layer (2019-04-30),

13. 9991272 - Semiconductor memory device (2018-06-05),

14. 9917099 - Semiconductor device having vertical channel between stacked electrode layers and insulating layers (2018-03-13),

15. 9842856 - Semiconductor memory device and method of manufacturing the same (2017-12-12),

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