The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Jun. 16, 2022
Kioxia Corporation, Tokyo, JP;
Tatsufumi Hamada, Nagoya Aichi, JP;
Yosuke Mitsuno, Yokkaichi Mie, JP;
Tomohiro Kuki, Yokkaichi Mie, JP;
Yusuke Morikawa, Yokkaichi Mie, JP;
Kioxia Corporation, Tokyo, JP;
Abstract
In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including first layers and second layers in a first direction, forming a hole extending in the first direction in the stacked film, and forming a first insulator on a side face of the stacked film in the hole. The method further includes removing the first insulator in the hole to expose a first part of the side face of the stacked film at a predetermined height in the first direction of the hole and to expose a side face of the first insulator remaining on a second part of the side face of the stacked film at the predetermined height. The method further includes forming a second insulator on the first part of the side face of the stacked film and the side face of the remaining first insulator in the hole.