The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 26, 2023

Filed:

Mar. 03, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yosuke Mitsuno, Yokkaichi Mie, JP;

Tatsufumi Hamada, Nagoya Aichi, JP;

Shinichi Sotome, Yokkaichi Mie, JP;

Tomohiro Kuki, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H01L 21/768 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/76804 (2013.01); H01L 23/5226 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor storage device includes: conductive layers arranged in a first direction; a first insulating layer extending in the first direction; a first semiconductor layer between the conductive layers and the first insulating layer; and a gate insulating film between the conductive layers and the first semiconductor layer. The first semiconductor layer includes a first region between a first insulating portion and the first conductive layer, a second region between a second insulating portion and the second conductive layer, and a third region between the first region and the second region. The third region includes a fourth region extending in a second direction, a fifth region between the first region and the fourth region, a sixth region between the second region and the fourth region, and a seventh region between the fifth region and the first region and extending in the first direction.


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