The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Aug. 06, 2020
Applicant:
Kioxia Corporation, Minato-ku, JP;
Inventors:
Tomohiro Kuki, Yokkaichi, JP;
Tatsufumi Hamada, Nagoya, JP;
Assignee:
Kioxia Corporation, Minato-ku, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); G11C 5/06 (2006.01); G11C 5/02 (2006.01); H01L 27/11582 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); G11C 5/025 (2013.01); G11C 5/06 (2013.01); H01L 27/11582 (2013.01);
Abstract
According to one embodiment, a semiconductor memory device includes: a substrate; a semiconductor above the substrate functioning as a channel of a cell transistor; a first silicon nitride layer above the semiconductor having an internal compressive stress of a first value; and a second silicon nitride layer above the first silicon nitride layer having an internal compressive stress of a second value. The second value is greater than the first value.