Kioxia Corporation

Toshiba Memory Corporation

Tatsufumi Hamada

Shinichi Sotome

Tomohiro Kuki

Yosuke Mitsuno

Shinya Naito

Takashi Izumida

Nobutoshi Aoki

Hikari Tajima

Takaya Yamanaka

Takayuki Kakegawa

Yasuhiro Uchimura

Yoshiaki Fukuzumi

Hiroshi Kanno

Ryota Suzuki

Tatsunori Isogai

Masaki Noguchi

Tatsuya Okamoto

Yuya Akeboshi

Yasunori Oshima

Muneyuki Tsuda

Yusuke Morikawa

Yosuke Mutsuno

Osamu Arisumi

In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including first layers and second layers in a first direction, forming a hole extending in the first direction in the stacked film, and forming a first insulator on a side face of the stacked film in the hole. The method further includes removing the first insulator in the hole to expose a first part of the side face of the stacked film at a predetermined height in the first direction of the hole and to expose a side face of the first insulator remaining on a second part of the side face of the stacked film at the predetermined height. The method further includes forming a second insulator on the first part of the side face of the stacked film and the side face of the remaining first insulator in the hole.

Three-dimensional type NAND memory device

According to one embodiment, a semiconductor storage device includes a substrate, a first electric charge holder, and a channel layer. At least a part of the first electric charge holder is curved in a first cross section along a surface of the substrate. The channel layer is inside the first electric charge holder in the first cross section. At least a part of the channel layer is curved in the first cross section. The first electric charge holder has a curvature varying in accordance with a position in the first cross section. The channel layer has a film thickness varying in accordance with the curvature of the first electric charge holder in the first cross section.

Semiconductor storage device and method of manufacturing semiconductor storage device

A semiconductor storage device includes a first stacked body, a second stacked body, an intermediate insulating layer, and a plurality of columnar bodies. The intermediate insulating layer is located between a first stacked body and a second stacked body and has a thickness in the stacking direction larger than that of one insulating layer in the plurality of insulating layers of the first stacked body. The plurality of columnar bodies are provided over the first stacked body and the second stacked body, and each columnar body includes a semiconductor body, a charge storage film provided between at least one of the plurality of conductive layers and the semiconductor body, and a semiconductor film. Each of the plurality of columnar bodies include a first columnar portion formed in the first stacked body, a second columnar portion formed in the intermediate insulating layer, and a third columnar portion formed in the second stacked body. A width of the semiconductor film in the second columnar portion in a direction intersecting the stacking direction is the shortest at an upper end of the intermediate columnar portion and the longest at a lower end of the intermediate columnar portion.

Semiconductor storage device and method for manufacturing semiconductor storage device

A semiconductor device includes: a first stacked film including first electrode layers; an insulating layer provided on the first stacked film; a second stacked film provided on the insulating layer and including second electrode layers; and a columnar portion extending through the first stacked film, the insulating layer, and the second stacked film. The columnar portion extending in the insulating layer includes a first portion having a first width in a second direction intersecting the first direction, and a second portion provided at a different location along the first direction and having a second width in the second direction. The columnar portion extending in the second stacked film includes a third portion having a third width along the second direction. The second width is larger than the first width and the third width.

Semiconductor device and method for manufacturing the same

According to one embodiment, a memory device includes a substrate; a structure including a plurality of conductive layers stacked on the substrate; and a pillar arranged inside the structure and including a semiconductor layer that extends in a direction perpendicular to a surface of the substrate. The semiconductor layer includes a first portion on a side of an upper portion of the structure, and a second portion between the first portion and the substrate. The first portion has a thickness larger than a thickness of the second portion.

Memory device

A semiconductor storage device includes: conductive layers arranged in a first direction; a first insulating layer extending in the first direction; a first semiconductor layer between the conductive layers and the first insulating layer; and a gate insulating film between the conductive layers and the first semiconductor layer. The first semiconductor layer includes a first region between a first insulating portion and the first conductive layer, a second region between a second insulating portion and the second conductive layer, and a third region between the first region and the second region. The third region includes a fourth region extending in a second direction, a fifth region between the first region and the fourth region, a sixth region between the second region and the fourth region, and a seventh region between the fifth region and the first region and extending in the first direction.

Semiconductor storage device and manufacturing method thereof

A semiconductor device according to an embodiment includes a stacked body having first films and second films that are alternately stacked, a light shielding film provided in a specific layer of the stacked body and having a higher optical absorptivity than that of the second films, and a channel film extending in the stacked body in the stacking direction. The channel film includes a first part located on an upper side than the light shielding film in the stacking direction and containing a monocrystalline semiconductor.

Semiconductor device with hybrid channel

According to one embodiment, a semiconductor memory device includes: a substrate; a semiconductor above the substrate functioning as a channel of a cell transistor; a first silicon nitride layer above the semiconductor having an internal compressive stress of a first value; and a second silicon nitride layer above the first silicon nitride layer having an internal compressive stress of a second value. The second value is greater than the first value.

Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.

Semiconductor memory device and manufacturing method of semiconductor memory device

According to one embodiment, a semiconductor memory device includes a base layer, conductive layers, an insulation layer, a semiconductor layer and a charge storage layer. The conductive layers are stacked above the base layer in a first direction. The insulation layer is extending in the conductive layers in the first direction. The semiconductor layer is arranged between the insulation layer and the conductive layers. The charge storage layer is arranged between the semiconductor layer and the conductive layers. The insulation layer includes a first insulation layer arranged on a side of the base layer and containing polysilazane and a second insulation layer arranged on the first insulation layer on a side opposite from the base layer.

A semiconductor storage device includes a stacked body and a columnar body. The stacked body includes a plurality of conductive layers and a plurality of insulating layers that are alternately stacked in a first direction. The columnar body extends through the stacked body in the first direction and includes a core portion, a channel film, a tunnel oxide film, and a charge storage film in this order from a center portion thereof. The channel film has a first region in contact with the core portion and a second region in contact with the tunnel oxide film. The first region is a semiconductor doped with impurities. The second region is a semiconductor. A concentration of the impurities in the second region is lower than that in the first region.

Semiconductor storage device with columnar body having impurity containing channel film

According to one embodiment, a semiconductor device includes a substrate; a stacked body provided on the substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed; a semiconductor body provided in the stacked body; and an insulating film. The semiconductor body includes a channel portion extending in a stacking direction of the stacked body, and a lower end portion of the semiconductor body provided between the channel portion and the substrate. The insulating film includes a charge storage film provided between the stacked body and the semiconductor body. A lower end portion of the insulating film surrounds the lower end portion of the semiconductor body. An upper surface of the lower end portion of the insulating film is provided at a lower height than an upper surface of the lower end portion of the semiconductor body in the stacking direction.

Method for manufacturing a semiconductor device including a vertical channel between stacked electrode layers and an insulating layer

According to one embodiment, a semiconductor memory device includes a base semiconductor layer, first and second conductive layers, a semiconductor body, a memory layer, first and second semiconductor regions, and an insulating portion. The first conductive layer is separated from the base semiconductor layer in a first direction. The second conductive layer is provided between the base semiconductor layer and the first conductive layer. The semiconductor body extends through the first conductive layer in the first direction. The memory layer is provided between the semiconductor body and the first conductive layer. The first semiconductor region is provided between the memory layer and the base semiconductor layer and between the semiconductor body and the base semiconductor layer, and is of a first conductivity type. The second semiconductor region is provided between the first semiconductor region and the memory layer, and is of a second conductivity type.

Semiconductor device having vertical channel between stacked electrode layers and insulating layers

According to an embodiment, a semiconductor memory device comprises: a plurality of control gate electrodes stacked above a substrate; a first semiconductor layer extending in a first direction above the substrate and facing the plurality of control gate electrodes; a gate insulating layer extending in the first direction and provided between the control gate electrode and first semiconductor layer; and a second semiconductor layer positioned downwardly of the first semiconductor layer and gate insulating layer, and connected to a lower end of the first semiconductor layer and the substrate. Moreover, the first semiconductor layer comprises: a first portion contacting an upper surface of the second semiconductor layer at a position more downward than a lower end of the gate insulating layer; and a second portion connected to an upper end of the first portion, extending in the first direction, and having a different crystalline structure from the first portion.

Growing community of inventors

Yokkaichi, Japan

Tatsufumi Hamada