The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Feb. 25, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yosuke Mitsuno, Yokkaichi Mie, JP;

Tatsufumi Hamada, Nagoya Aichi, JP;

Shinichi Sotome, Yokkaichi Mie, JP;

Tomohiro Kuki, Yokkaichi Mie, JP;

Yuya Akeboshi, Yokkaichi Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11556 (2017.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08);
Abstract

According to one embodiment, a semiconductor memory device includes a stacked body of first conductor layers and second conductor layers. A pillar including a semiconductor layer extends along through the stacked body in a first direction. A charge storage layer is between the conductor layers and the semiconductor layer. The semiconductor layer includes a first portion extending along the first direction from an uppermost first conductor layer to a lowermost second conductor layer and a second portion above the first portion in the first direction. The second portion has a diameter that decreases with increasing distance along the first direction from the first portion.


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