The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 16, 2024

Filed:

Sep. 01, 2021
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Yosuke Mitsuno, Mie, JP;

Tatsufumi Hamada, Aichi, JP;

Shinichi Sotome, Mie, JP;

Tomohiro Kuki, Mie, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); G11C 16/04 (2006.01); H10B 43/10 (2023.01); H10B 43/20 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); G11C 16/0483 (2013.01); H10B 43/10 (2023.02); H10B 43/20 (2023.02);
Abstract

A semiconductor storage device includes a first stacked body, a second stacked body, an intermediate insulating layer, and a plurality of columnar bodies. The intermediate insulating layer is located between a first stacked body and a second stacked body and has a thickness in the stacking direction larger than that of one insulating layer in the plurality of insulating layers of the first stacked body. The plurality of columnar bodies are provided over the first stacked body and the second stacked body, and each columnar body includes a semiconductor body, a charge storage film provided between at least one of the plurality of conductive layers and the semiconductor body, and a semiconductor film. Each of the plurality of columnar bodies include a first columnar portion formed in the first stacked body, a second columnar portion formed in the intermediate insulating layer, and a third columnar portion formed in the second stacked body. A width of the semiconductor film in the second columnar portion in a direction intersecting the stacking direction is the shortest at an upper end of the intermediate columnar portion and the longest at a lower end of the intermediate columnar portion.


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