Average Co-Inventor Count = 2.7

ph-index = 13

Forward Citations = 554(Granted Patents)

Forward Citations (Not Self Cited) = 549(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hyogo-ken, JP (1996)
Itami, JP (1994 - 1998)
Hyogo, JP (1995 - 2003)
Chiyoda-ku, JP (2005)
Tokyo, JP (1998 - 2013)

Company Filing History:

46 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

6 out of 3,781

Renesas Technology Corp.

patents

2 out of 7,524

Renesas Electronics Corporation

patents

Years Active: 1994-2013

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Areas of Expertise:

Semiconductor Device

Manufacturing Method

Element Isolation

Epitaxial Semiconductor

Static-Type Memory

LDD Structure

Trench Type Isolation

Impurity Layer

Wiring Structure

Oxynitride Film

Complementary MOS

Silicide Layer

54 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8592284 - Semiconductor device and manufacturing method thereof (2013-11-26),

2. 8043918 - Semiconductor device and its manufacturing method (2011-10-25),

3. 7791163 - Semiconductor device and its manufacturing method (2010-09-07),

4. 6890837 - Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate (2005-05-10),

5. 6841440 - Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same (2005-01-11),

6. 6744113 - Semiconductor device with element isolation using impurity-doped insulator and oxynitride film (2004-06-01),

7. 6737315 - Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate (2004-05-18),

8. 6707099 - Semiconductor device and manufacturing method thereof (2004-03-16),

9. 6667221 - Method of manufacturing semiconductor device (2003-12-23),

10. 6661066 - Semiconductor device including inversely tapered gate electrode and manufacturing method thereof (2003-12-09),

11. 6577021 - Static-type semiconductor memory device (2003-06-10),

12. 6548871 - Semiconductor device achieving reduced wiring length and reduced wiring delay by forming first layer wiring and gate upper electrode in same wire layer (2003-04-15),

13. 6541825 - Semiconductor device including impurity layer having continuous portions formed at different depths and method of manufacturing the same (2003-04-01),

14. 6521527 - Semiconductor device and method of fabricating the same (2003-02-18),

15. 6503799 - Method of manufacturing semiconductor device (2003-01-07),

Title: Takashi Kuroi: Pioneering Inventor from Tokyo

Introduction: Takashi Kuroi is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Takashi Kuroi holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Takashi Kuroi has worked with leading tech companies in Japan, spearheading research and development projects that have led to significant technological breakthroughs in various industries.

Collaborations: Throughout his career, Takashi Kuroi has collaborated with top researchers, engineers, and scientists both locally and internationally, fostering a culture of innovation and knowledge sharing to drive progress in the tech sector.

Conclusion: Takashi Kuroi's relentless pursuit of innovation and his passion for creating cutting-edge solutions have solidified his reputation as a visionary inventor in Tokyo and beyond.

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