The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2013
Filed:
Jun. 30, 2009
Masato Ishibashi, Tokyo, JP;
Katsuyuki Horita, Tokyo, JP;
Tomohiro Yamashita, Tokyo, JP;
Takaaki Tsunomura, Tokyo, JP;
Takashi Kuroi, Tokyo, JP;
Masato Ishibashi, Tokyo, JP;
Katsuyuki Horita, Tokyo, JP;
Tomohiro Yamashita, Tokyo, JP;
Takaaki Tsunomura, Tokyo, JP;
Takashi Kuroi, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
Provided are a semiconductor device making it possible to form an element region having a dimension close to a designed dimension, restrain a phenomenon similar to gate-induced drain leakage, and further restrain compressive stress to be applied to the element region by oxidation of a conductive film; and a method for manufacturing the semiconductor device. Trenches are made in a main surface of a semiconductor substrate. By oxidizing the wall surface of each of the trenches, a first oxide film is formed on the wall surface. An embedded conductive film is formed to be embedded into the trench. The embedded conductive film is oxidized in an atmosphere containing an active oxidizing species, thereby forming a second oxide film. A third oxide film is formed on the second oxide film by CVD or coating method.