Takaaki Tsunomura

This inventor holds 23 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Devices. Top assignee: Renesas Electronics Corporation. Active years: 2013-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takaaki Tsunomura. Retrieved from https://idiyas.com/inventor/takaaki-tsunomura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 23 (Patent Applications = 8)

% Patents Active = 95.7

Average Co-Inventor Count = 3.7

ph-index = 5

Forward Citations = 41(Granted Patents)

Location History:

Kawasaki, JP (2015)
Kanagawa, JP (2015 - 2023)
Tokyo, JP (2013 - 2024)

Company Filing History:

23 out of 7,659

Renesas Electronics Corporation

patents

Years Active: 2013-2025

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Areas of Expertise:

Semiconductor Device

Manufacturing Method

Field-Effect Transistor

Buried Oxide Film

Silicon Layer

Short-Channel Characteristics

Parasitic Capacitance

SOI Substrate

MOSFET

MISFET

Carbon Layer

23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12261205 - Semiconductor device (2025-03-25),

2. 12080716 - Method of manufacturing semiconductor device (2024-09-03),

3. 11996448 - Manufacturing method of semiconductor device including field-effect transistor comprising buried oxide (BOX) film and silicon layer (2024-05-28),

4. 11695012 - Semiconductor device and manufacturing method of the same (2023-07-04),

5. 11658211 - Semiconductor device and manufacturing method of the same (2023-05-23),

6. 10756115 - Semiconductor device and manufacturing method of the same (2020-08-25),

7. 10510775 - Semiconductor device and manufacturing method of the same (2019-12-17),

8. 10461158 - Semiconductor device and manufacturing method of the same (2019-10-29),

9. 10411112 - Semiconductor device with silicon layer containing carbon (2019-09-10),

10. 10263078 - Method of manufacturing a MISFET on an SOI substrate (2019-04-16),

11. 9978839 - Method of manufacturing a MOSFET on an SOI substrate (2018-05-22),

12. 9935125 - Semiconductor device and manufacturing method of the same (2018-04-03),

13. 9773872 - Method of manufacturing a semiconductor device to prevent occurrence of short-channel characteristics and parasitic capacitance (2017-09-26),

14. 9722044 - Manufacturing method of semiconductor device with silicon layer containing carbon (2017-08-01),

15. 9484456 - Semiconductor device and manufacturing method of the same (2016-11-01),

Title: Takaaki Tsunomura - Innovative Inventor from Tokyo

Introduction: Takaaki Tsunomura is a renowned inventor hailing from Tokyo, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Tsunomura's latest patents include a cutting-edge AI-powered healthcare device designed to revolutionize patient care, as well as a sustainable energy solution that aims to tackle environmental challenges.

Career Highlights: With a career spanning over two decades, Tsunomura has worked with leading tech companies in Japan, spearheading research and development projects that have resulted in numerous successful inventions and patents.

Collaborations: Tsunomura has collaborated with top research institutions and universities in Japan, fostering a culture of innovation and knowledge-sharing to push the boundaries of technological advancements further.

Conclusion: Takaaki Tsunomura's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his position as a trailblazing inventor in the vibrant landscape of Tokyo, Japan.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

8 patents pending: