The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2003
Filed:
Aug. 07, 2001
Applicant:
Inventors:
Takashi Kuroi, Hyogo, JP;
Shuichi Ueno, Hyogo, JP;
Hidekazu Oda, Hyogo, JP;
Satoshi Shimizu, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/144 ;
Abstract
Obtained are a semiconductor device which can prevent diffusion of an impurity contained in a gate electrode and a method of fabricating the same. In this semiconductor device, a gate oxide film and a P -type gate electrode which are formed on a P-type silicon substrate are doped with nitrogen.
Kuroi, Takashi. (2003). Semiconductor device and method of fabricating the same (U.S. Patent No. 6521527). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6521527
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile