Hidekazu Oda

This inventor holds 76 USPTO granted patents and 5 published patent applications, primarily in Semiconductor Devices (CPC class H01L). Top assignees: Mitsubishi Denki Kabushiki Kaisha, Renesas Electronics Corporation, Renesas Technology Corp.. Active years: 1989-2025.

USPTO Granted Patents = 76 (Patent Applications = 5)

% Patents Active = 72.4

Average Co-Inventor Count = 2.8

ph-index = 13

Forward Citations = 575(Granted Patents)

Forward Citations (Not Self Cited) = 500(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Itami, JP (1998)
Hyogo, JP (1989 - 2003)
Kawasaki, JP (2015 - 2018)
Kanagawa, JP (2015 - 2023)
Tokyo, JP (1998 - 2024)

Company Filing History:

34 out of 21,351

Mitsubishi Denki Kabushiki Kaisha

patents

30 out of 7,649

Renesas Electronics Corporation

patents

12 out of 3,781

Renesas Technology Corp.

patents

Years Active: 1989-2025

Loading Chart...

Areas of Expertise:

Semiconductor Device

Tensile Stress

Silicon Substrate

Field Effect Transistor

Integrated Circuit

Manufacturing Method

Offset Sidewall Structure

Resistive Element

Silicon-On-Insulator

Gate Electrode

Element Isolation

Semiconductor Film

76 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12198987 - Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same (2025-01-14),

2. 12080716 - Method of manufacturing semiconductor device (2024-09-03),

3. 11695012 - Semiconductor device and manufacturing method of the same (2023-07-04),

4. 10756115 - Semiconductor device and manufacturing method of the same (2020-08-25),

5. 10510775 - Semiconductor device and manufacturing method of the same (2019-12-17),

6. 10121705 - Semiconductor device and method of manufacturing the same (2018-11-06),

7. 10050122 - Semiconductor device and manufacturing method of the same (2018-08-14),

8. 9966452 - Semiconductor device having a field effect transistor formed on a silicon-on-insulator substrate and manufacturing method thereof (2018-05-08),

9. 9935125 - Semiconductor device and manufacturing method of the same (2018-04-03),

10. 9847417 - Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same (2017-12-19),

11. 9614081 - Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same (2017-04-04),

12. 9508598 - Semiconductor device and manufacturing method of the same (2016-11-29),

13. 9443870 - Semiconductor device and method of manufacturing the same (2016-09-13),

14. 9412867 - Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of manufacturing the same (2016-08-09),

15. 9349816 - Method of manufacturing semiconductor device with offset sidewall structure (2016-05-24),

Title: The Innovative Journey of Hidekazu Oda

Introduction: Hidekazu Oda, a pioneering inventor hailing from Tokyo, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Hidekazu Oda's latest patents focus on advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we perceive transportation technology.

Career Highlights: With a career spanning over two decades, Hidekazu Oda has been at the forefront of technological advancements, holding key positions in leading research institutions and collaborating with top-tier companies to bring his inventions to life.

Collaborations: Hidekazu Oda has collaborated with renowned universities and tech giants to further develop his inventions, showcasing his ability to work across disciplines and industries to drive innovation forward.

Conclusion: Hidekazu Oda's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true trailblazer in the world of inventions.