The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Sep. 24, 2015
Applicant:
Renesas Electronics Corporation, Koutou-ku, Tokyo, JP;
Inventor:
Hidekazu Oda, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/088 (2006.01); H01L 29/66 (2006.01); H01L 29/36 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 21/324 (2006.01); H01L 21/265 (2006.01); H01L 29/167 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/76251 (2013.01); H01L 21/84 (2013.01); H01L 27/088 (2013.01); H01L 27/1203 (2013.01); H01L 27/1207 (2013.01); H01L 29/0649 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/36 (2013.01); H01L 29/78 (2013.01); H01L 29/78606 (2013.01); H01L 29/78648 (2013.01); H01L 29/78654 (2013.01); H01L 29/78687 (2013.01);
Abstract
A semiconductor device includes an SOI substrate and a MISFET formed on the SOI substrate. The SOI substrate has a base substrate, a ground plane region formed on the base substrate, a BOX layer formed on the ground plane region and an SOI layer formed on the BOX layer. The base substrate is made of silicon and the ground plane region includes a semiconductor region made of silicon carbide.