The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Oct. 14, 2003
Takashi Kuroi, Tokyo, JP;
Katsuyuki Horita, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
A substrate surface (S) is thermally oxidized to form an oxide film. The oxide film is patterned so that the substrate surface (S) in an active region is exposed. An oxide film () is thereby provided. An exposed substrate surface (S) is thermally oxidized, to form a thermal oxide film. This thermal oxide film is thereafter removed at least in an element forming region. A silicon film () is epitaxially grown on the exposed substrate surface (S). Thereafter the silicon film () is polished by CMP to an extent that an upper surface of the silicon film after polishing is not more than an upper surface of the oxide film () in height. Next, the surface of the silicon film is thermally oxidized to form a thermal oxide film. After ion implantation of various types, this thermal oxide film is removed.