Tokyo, Japan

Katsuomi Shiozawa


Average Co-Inventor Count = 3.9

ph-index = 10

Forward Citations = 377(Granted Patents)


Location History:

  • Amagasaki, JP (1996 - 1998)
  • Hyogo, JP (2000 - 2003)
  • Kobe, JP (1996 - 2006)
  • Tokyo, JP (2001 - 2012)

Company Filing History:


Years Active: 1996-2012

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30 patents (USPTO):Explore Patents

Title: Katsuomi Shiozawa: A Pioneer in Nitride Semiconductor Innovations

Introduction

Katsuomi Shiozawa is a distinguished inventor based in Tokyo, Japan, known for his significant contributions to the field of semiconductor technology. With a remarkable portfolio of 30 patents, Shiozawa has consistently pushed the boundaries of innovation, focusing particularly on nitride semiconductors, which play a crucial role in various electronic applications.

Latest Patents

Among his latest inventions, Shiozawa developed a nitride semiconductor device that features a silicon-containing layer, as well as an advanced manufacturing method for such devices. The patent describes a semiconductor device designed to reduce contact resistance and enhance stability between the back surface of a nitride substrate and an electrode formed over it. This device comprises an n-type Gallium Nitride (GaN) substrate upon which a semiconductor element is established, alongside an n-electrode that serves as a metal electrode. A connection layer, composed of materials other than nitride semiconductors and containing silicon, bridges the GaN substrate and the n-electrode.

Another significant patent by Shiozawa details a method for manufacturing a nitride semiconductor light-emitting element. This method involves creating a semiconductor laminated structure with an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer. It further combines the formation of a p-type electrode, which includes layers of palladium (Pd) and tantalum (Ta), and specifies a heat treatment process in an oxygen-containing atmosphere. The resulting structure incorporates a pad electrode composed of gold (Au) on the p-type electrode, enhancing the device's performance.

Career Highlights

Shiozawa has had an impressive career, having worked for reputable companies such as Mitsubishi Denki Kabushiki Kaisha and Mitsubishi Electric Corporation. His experience in these leading firms has solidified his expertise in semiconductor innovations, enabling him to make substantial advancements in technology and patents in his field.

Collaborations

Throughout his career, Katsuomi Shiozawa has collaborated with notable colleagues, including Toshiyuki Oishi and Kazushige Kawasaki. These collaborations have fostered an environment of innovation, allowing for a cross-pollination of ideas that have led to groundbreaking advancements in semiconductor technology.

Conclusion

Katsuomi Shiozawa stands out as a remarkable inventor in the semiconductor industry. With his extensive patent portfolio, particularly in nitride semiconductor devices and light-emitting elements, he has made significant contributions to modern technology. His career, characterized by collaboration and innovation, will undoubtedly continue to influence the future of the semiconductor field.

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