The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2011
Filed:
Nov. 11, 2008
Katsuomi Shiozawa, Tokyo, JP;
Kyozo Kanamoto, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Hiroshi Kurokawa, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Yasunori Tokuda, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Kyozo Kanamoto, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Hiroshi Kurokawa, Tokyo, JP;
Kenichi Ohtsuka, Tokyo, JP;
Yoichiro Tarui, Tokyo, JP;
Yasunori Tokuda, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.