Tokyo, Japan

Toshiyuki Oishi

This inventor holds 26 USPTO granted patents and 4 published patent applications and 1 EPO patent, primarily in Nitride Semiconductors. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Corporation, Mitsubishi Electric Research Laboratories, Inc.. Active years: 1991-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Toshiyuki Oishi. Retrieved from https://idiyas.com/inventor/toshiyuki-oishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 

% Patents Active = 76.9

 

Average Co-Inventor Count = 4.7

ph-index = 9

Forward Citations = 334(Granted Patents)


Location History:

  • Amagasaki, JP (1991)
  • Hyogo, JP (1997 - 2003)
  • Tokyo, JP (2002 - 2017)

Company Filing History:


Years Active: 1991-2017

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Areas of Expertise:
Transistor
Nitride Semiconductor
High Electron Mobility
Field Effect Transistor
Gallium-Nitride
Manufacturing Method
Thin Film Forming
Semiconductor Device
Trench Isolation
Laser Technology
26 patents (USPTO):Explore Patents

Title: Toshiyuki Oishi: A Pioneer in Semiconductor Innovations

Introduction

Toshiyuki Oishi is a distinguished inventor based in Tokyo, Japan, with a remarkable portfolio boasting 26 patents. His work primarily focuses on advancements in semiconductor technology, specifically in the realm of transistors. Oishi's contributions have significantly impacted the field and paved the way for innovative applications in electronics.

Latest Patents

Among his recent patents, Oishi has developed a method for manufacturing transistors that utilize nitride semiconductors. One notable patent describes a process involving the strategic removal of a portion of an AlN spacer layer beneath a gate electrode in high electron mobility transistors (GaN HEMI). This invention enhances the transistor's performance by optimizing its structural design.

Another significant patent details a transistor characteristic calculation apparatus that employs a large signal equivalent circuit model. This apparatus features a buffer trap circuit situated between the drain and source terminals, allowing for a sophisticated assessment of transistor characteristics by integrating parallel and series circuit configurations, which include resistors, capacitors, and diodes.

Career Highlights

Oishi has made considerable strides in his career, having worked with prominent companies such as Mitsubishi Denki Kabushiki Kaisha and Mitsubishi Electric Corporation. His time at these institutions has equipped him with extensive experience and insights into semiconductor technologies, further solidifying his position as an industry leader and innovator.

Collaborations

Throughout his career, Toshiyuki Oishi has collaborated with notable coworkers, including Yuji Abe and Katsuomi Shiozawa. Their joint efforts have fostered a creative environment that has facilitated groundbreaking developments in the field of semiconductor engineering.

Conclusion

Toshiyuki Oishi exemplifies the spirit of innovation in the semiconductor industry. Through his impressive array of patents and collaborative efforts, he continues to push the boundaries of what's possible in electronics, making substantial contributions to the advancement of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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