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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6617654 B1

PDFFull Text
Expired
Date of Patent:
Sep. 09, 2003

Filed:

Sep. 19, 2001

Semiconductor device with sidewall spacers and elevated source/drain region

Applicant:
Inventors:

Toshiyuki Oishi, Tokyo, JP;

Kohei Sugihara, Tokyo, JP;

Naruhisa Miura, Tokyo, JP;

Yuji Abe, Tokyo, JP;

Yasunori Tokuda, Tokyo, JP;

Assignee:

Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;

Attorney:

Leydig, Voit & Mayer, Ltd.

Primary Examiner:

Richard Elms

Assistant Examiner:

Christian D Wilson

Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract

Source and drain regions include regions of an epitaxial silicon film on the surface of the substrate and regions in the substrate. The depth of junctions of the source and drain regions is identical to or shallower than the depth of junctions of extension regions. As a result, even if the thickness of the side wall layer is reduced, since the depletion layer of the extension regions with lower impurity concentration compared with the source and drain regions is predominant, the short channel effect has a smaller effect.

Find Patent Forward Citations

Oishi, Toshiyuki. (2003). Semiconductor device with sidewall spacers and elevated source/drain region (U.S. Patent No. 6617654). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6617654

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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