Tokyo, Japan

Yasunori Tokuda

This inventor holds 21 USPTO granted patents and 1 published patent application, primarily in Nitride Semiconductors. Top assignees: Mitsubishi Denki Kabushiki Kaisha, Mitsubishi Electric Corporation. Active years: 1988-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasunori Tokuda. Retrieved from https://idiyas.com/inventor/yasunori-tokuda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21 

% Patents Active = 81.0

Average Co-Inventor Count = 3.1

ph-index = 9

Forward Citations = 250(Granted Patents)


Location History:

  • Itami, JP (1992)
  • Amagasaki, JP (1988 - 1994)
  • Hyogo, JP (1994 - 2003)
  • Tokyo, JP (2003 - 2011)

Company Filing History:


Years Active: 1988-2011

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Areas of Expertise:
Nitride Semiconductor
Field Effect Transistor
Optical Switching
DFB Laser
P-Type Contact Layer
Gallium-Nitride
Parasitic Capacitance
Light Responsive Device
Semiconductor Device
Elevated Source/Drain
Composite Resonator
Nonlinear Optical Element
21 patents (USPTO):Explore Patents

Title: Yasunori Tokuda: Innovator in Semiconductor Technology

Introduction

Yasunori Tokuda is a prominent inventor based in Tokyo, Japan. With an impressive portfolio of 21 patents, he has made significant contributions to the field of semiconductor technology. His pioneering work focuses on enhancing the performance and efficiency of electronic devices.

Latest Patents

One of Tokuda's latest patents involves a nitride semiconductor heterojunction field effect transistor that incorporates a wide band gap barrier layer featuring a high concentration impurity region. This invention aims to provide a semiconductor device capable of achieving high output and breakdown voltage. The design includes an AlGaN channel layer and an AlGaN barrier layer, with distinct composition ratios that enhance the device's performance.

Another notable patent includes a nitride semiconductor device equipped with an electrode that maintains ohmic contact with a P-type nitride semiconductor contact layer. This device addresses the issue of resistance between the p electrode and other electrodes, utilizing a unique multi-layer structure involving palladium and tantalum films. This innovation ensures low resistance, preventing potential failures in contact.

Career Highlights

Yasunori Tokuda has worked with esteemed companies, including Mitsubishi Denki Kabushiki Kaisha and Mitsubishi Electric Corporation. His tenure at these organizations has helped shape his expertise in semiconductor technologies and patent development.

Collaborations

Throughout his career, Tokuda has collaborated with notable colleagues such as Toshiyuki Oishi and Yuji Abe. Their combined efforts have contributed to advancements in semiconductor innovations and furthered the understanding of electronic device efficiency.

Conclusion

Yasunori Tokuda's inventive spirit and dedication to the field of semiconductor technology are evident through his numerous patents. His continuous efforts to improve electronic components underscore his importance as an inventor and innovator in this vital industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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