The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2001
Filed:
Feb. 03, 1999
Applicant:
Inventors:
Taisuke Furukawa, Hyogo, JP;
Takumi Nakahata, Hyogo, JP;
Shigemitsu Maruno, Hyogo, JP;
Kohei Sugihara, Hyogo, JP;
Yasutaka Nishioka, Hyogo, JP;
Satoshi Yamakawa, Hyogo, JP;
Yasunori Tokuda, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
According to the inventive method of fabricating a semiconductor device, a silicon substrate is exposed to an oxygen atmosphere of 600° C. to 900° C., for forming silicon oxide films on surfaces of epitaxial silicon layers and those of silicon fragments. Thus, a method of fabricating a semiconductor device capable of preventing electrodes thereof from shorting can be provided.