The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Mar. 25, 2008
Takuma Nanjo, Tokyo, JP;
Muneyoshi Suita, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Yasunori Tokuda, Tokyo, JP;
Takuma Nanjo, Tokyo, JP;
Muneyoshi Suita, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Yasunori Tokuda, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
The objective of the present invention is to provide a semiconductor device of a hetero-junction field effect transistor that is capable of obtaining a high output and a high breakdown voltage and a manufacturing method of the same. The present invention is a semiconductor device of a hetero-junction field effect transistor provided with an AlGaN channel layer with a composition ratio of Al being x (0<x<1) formed on a substrate, an AlGaN barrier layer with a composition of Al being y (0<y≦1) formed on the channel layer, and source/drain electrodes and a gate electrode formed on the barrier layer, wherein the composition ratio y is larger than the composition ratio x.