The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jul. 02, 2007
Kyozo Kanamoto, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Junichi Horie, Tokyo, JP;
Toshihiko Shiga, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Kyozo Kanamoto, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Junichi Horie, Tokyo, JP;
Toshihiko Shiga, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.