The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2008
Filed:
Jun. 03, 2005
Katsuomi Shiozawa, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Zempei Kawazu, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Zempei Kawazu, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.