The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2017
Filed:
Dec. 17, 2012
Applicants:
Yutaro Yamaguchi, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Hiroshi Otsuka, Tokyo, JP;
Koji Yamanaka, Tokyo, JP;
Inventors:
Yutaro Yamaguchi, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Hiroshi Otsuka, Tokyo, JP;
Koji Yamanaka, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/201 (2006.01); H01L 29/205 (2006.01); H01L 29/423 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/1029 (2013.01); H01L 29/201 (2013.01); H01L 29/205 (2013.01); H01L 29/42376 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01); H01L 29/42316 (2013.01); H01L 29/778 (2013.01); H01L 29/7782 (2013.01); H01L 29/7788 (2013.01); H01L 2924/13064 (2013.01);
Abstract
A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMI) having a nitride semiconductor used therein is removed only in a region directly below a gate electrode and in a vicinity of the region, and a length of a portion where the AlN spacer layer is not present is sufficiently smaller than a distance between a source electrode and a drain electrode.