The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 2010
Filed:
Aug. 24, 2007
Katsuomi Shiozawa, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Toshihiko Shiga, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Toshihiko Shiga, Tokyo, JP;
Toshiyuki Oishi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A nitride semiconductor device according to the present invention includes a P-type contact layer and a P-type electrode provided on the P-type contact layer. The P-type electrode includes a AuGa film provided on the P-type contact layer, a Au film provided on the AuGa film, a Pt filmprovided on the Au film, and a Au film provided on the Pt film. The ratio of the thickness of the AuGa film to the total thickness of the AuGa film and the Au film is not less than 12% but not more than 46%.