The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 21, 2011
Filed:
Nov. 05, 2008
Kyozo Kanamoto, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Shinji Abe, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Kyozo Kanamoto, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Shinji Abe, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400° C. and 600° C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.