Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Renesas Technology Corp.

Katsuomi Shiozawa

Kazushige Kawasaki

Toshiyuki Oishi

Kyozo Kanamoto

Takashi Kuroi

Katsuyuki Horita

Hitoshi Sakuma

Katsumi Nakamura

Tadaharu Minato

Yuji Abe

Yasuyoshi Itoh

Yasunori Tokuda

Shuuichi Tominaga

Yoichiro Tarui

Hiroshi Kurokawa

Kenichi Ohtsuka

Toshihiko Shiga

Syuichi Ueno

Hidekazu Oda

Takaaki Murakami

Shinji Abe

Junichi Horie

Kyosuke Kuramoto

Zempei Kawazu

Yosuke Suzuki

Masashi Kitazawa

Yoshiyuki Suehiro

Takafumi Oka

Kenji Yasumura

Tatsuo Omori

Shuuichi Tominga

A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type Ga&#x2014;N substrate () over which a semiconductor element is formed, and an n-electrode () as a metal electrode formed over the back surface of the GaN substrate (). A connection layer () is formed between the GaN substrate () and the n-electrode (), and the connection layer () is composed of a material that is other than nitride semiconductors and that contains silicon.

Nitride semiconductor device having a silicon-containing layer and manufacturing method thereof

A method for manufacturing a nitride semiconductor light-emitting element comprises: forming a semiconductor laminated structure wherein an n-type nitride semiconductor epitaxial layer, an active layer, and a p-type nitride semiconductor epitaxial layer are laminated on a substrate; forming a p-type electrode having a first electrode layer containing Pd and a second electrode layer containing Ta on the p-type nitride semiconductor epitaxial layer; heat treating at a temperature between 400&#xb0; C. and 600&#xb0; C. in ambient containing oxygen after forming the p-type electrode; and forming a pad electrode containing Au on the p-type electrode after the heat treating.

Method for manufacturing nitride semiconductor light-emitting element

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, which is an antioxidant film for preventing oxidation of the Ta film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film as an antioxidant film is formed on the entire upper surface of the Ta film which forms the p electrode, to prevent oxidation of the Ta film. This inhibits the resistance between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the low-resistance p electrode.

Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layer

A P-type electrode material is provided on a top surface of a P-type contact layer. The P-type electrode material is formed with an AuGa film, an Au film, a Pt film, and an Au film. The AuGa film is provided on the P-type contact layer. The Au film is provided on the AuGa film. The Pt film is provided on the Au film. The Au film is provided on the Pt film. With this, a nitride semiconductor device having a P-type electrode which can decrease a contact resistance between a P-type contact layer and the P-type electrode is obtained.

Nitride semiconductor device and method of manufacturing the same

A nitride semiconductor device with a p electrode having no resistance between itself and other electrodes, and a method of manufacturing the same are provided. A p electrode is formed of a first Pd film, a Ta film, and a second Pd film, and on a p-type contact layer of a nitride semiconductor. On the second Pd film, a pad electrode is formed. The second Pd film is formed on the entire upper surface of the Ta film which forms part of the p electrode, and serves as an antioxidant film that prevents oxidation of the Ta film. Preventing oxidation of the Ta film, the second Pd film can reduce the resistance that may exist between the p electrode and the pad electrode, thereby preventing a failure in contact between the p electrode and the pad electrode and providing the p electrode with low resistance.

Nitride semiconductor device

A nitride semiconductor device includes an n-type GaN substrate with a semiconductor device formed thereon and an n-type electrode which is a metal electrode formed on the rear surface of the GaN substrate. A surface modified layer and a reaction layer are interposed between the GaN substrate and n-type electrode. The surface modified layer serves as a carrier supplying layer, and is formed by causing the rear surface of the GaN substrate to react with a Si-containing plasma to be modified. The reaction layer is generated by partially removing a deposited material deposited on the surface modified layer by cleaning to generate a deposited layer and then causing Ti contained in a first metal layer and the deposited layer to partially react by heat treatment.

Nitride semiconductor device and manufacturing method of the same

A nitride semiconductor device according to the present invention includes a P-type contact layer and a P-type electrode provided on the P-type contact layer. The P-type electrode includes a AuGa film provided on the P-type contact layer, a Au film provided on the AuGa film, a Pt filmprovided on the Au film, and a Au film provided on the Pt film. The ratio of the thickness of the AuGa film to the total thickness of the AuGa film and the Au film is not less than 12% but not more than 46%.

A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate () over which a semiconductor element is formed, and an n-electrode () as a metal electrode formed over the back surface of the GaN substrate (). A connection layer () is formed between the GaN substrate () and the n-electrode (), and the connection layer () is composed of a material that is other than nitride semiconductors and that contains silicon.

Nitride semiconductor device having a silicon-containing connection layer and manufacturing method thereof

A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O, O, NO, NO, or NOis supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700&#xb0; C. in an atmosphere containing a nitrogen-containing gas such as Nor NHor an inert gas such as Ar or He.

Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contact

A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.

Nitride semiconductor device and manufacturing method thereof

An SiOfilm is formed on a semiconductor layer stack, the SiOfilm having a thickness da and an etch rate Ra in buffered (BHF). A waveguide ridge with the SiOfilm thereon is formed using a resist pattern. An SiN film is formed on top and both sides of the waveguide ridge, while leaving the resist pattern in place, the SiN film having a thickness db and an etch rate Rb in BHF, where 1&#x3c;(db/Rb)/(da/Ra). Then the resist pattern and the overlying portion of the SiN film are removed by lift-off to form an opening in the SiN film. Wet etching for a predetermined period of time with BHF removes the SiOfilm from the waveguide ridge, while leaving the SiN film in place.

Method for manufacturing semiconductor optical device

A nitride semiconductor device is manufactured by the step of forming a nitride semiconductor layer form on a GaN substrate main surface, the step of polishing a back surface of the GaN substrate formed with the above-mentioned nitride semiconductor layer, the step of dry etching the back surface of the GaN substrate subjected to the above-mentioned polishing by using a gas mixture of chlorine and oxygen, and the step of forming an n-type electrode on the back surface of the GaN substrate subjected to the above-mentioned dry etching.

Method of manufacturing nitride semiconductor device

A semiconductor device that includes an insulating substrate, a plurality of semiconductor layers arranged to be isolated from one another on the insulating substrate, and a semiconductor element independently provided on the semiconductor layers. Further, a trench may extend from the main surface to the substrate and have an inner wall covered with an insulating film. At least one of an edge on the side of the substrate and an edge on the side opposite thereof of the semiconductor layer has a rounded surface. Further, an angle between a line tangent to a surface having a smallest radius of curvature of the rounded surface of the edge and the main surface ranges from 30&#xb0; to 60&#xb0; at a section of the edge.

Semiconductor device including trench with at least one of an edge of an opening and a bottom surface being round

A substrate surface (S) is thermally oxidized to form an oxide film. The oxide film is patterned so that the substrate surface (S) in an active region is exposed. An oxide film () is thereby provided. An exposed substrate surface (S) is thermally oxidized, to form a thermal oxide film. This thermal oxide film is thereafter removed at least in an element forming region. A silicon film () is epitaxially grown on the exposed substrate surface (S). Thereafter the silicon film () is polished by CMP to an extent that an upper surface of the silicon film after polishing is not more than an upper surface of the oxide film () in height. Next, the surface of the silicon film is thermally oxidized to form a thermal oxide film. After ion implantation of various types, this thermal oxide film is removed.

Method of manufacturing semiconductor device including steps of forming both insulating film and epitaxial semiconductor on substrate

A substrate surface ( S) is thermally oxidized to form an oxide film. The oxide film is patterned so that the substrate surface ( S) in an active region is exposed. An oxide film ( ) is thereby provided. An exposed substrate surface ( S) is thermally oxidized, to form a thermal oxide film. This thermal oxide film is thereafter removed at least in an element forming region. A silicon film ( ) is epitaxially grown on the exposed substrate surface ( S). Thereafter the silicon film ( ) is polished by CMP to an extent that an upper surface of the silicon film after polishing is not more than an upper surface of the oxide film ( ) in height. Next, the surface of the silicon film is thermally oxidized to form a thermal oxide film. After ion implantation of various types, this thermal oxide film is removed.

Growing community of inventors

Tokyo, Japan

Katsuomi Shiozawa