The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 23, 2010
Filed:
Mar. 02, 2007
Katsuomi Shiozawa, Tokyo, JP;
Kyozo Kanamoto, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Kyozo Kanamoto, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A semiconductor device and a manufacturing method thereof are provided which enable reduction and enhanced stability of contact resistance between the back surface of a nitride substrate and an electrode formed thereover. A nitride semiconductor device includes an n-type GaN substrate () over which a semiconductor element is formed, and an n-electrode () as a metal electrode formed over the back surface of the GaN substrate (). A connection layer () is formed between the GaN substrate () and the n-electrode (), and the connection layer () is composed of a material that is other than nitride semiconductors and that contains silicon.