The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2009
Filed:
Mar. 26, 2007
Kyozo Kanamoto, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Yoshiyuki Suehiro, Tokyo, JP;
Kyozo Kanamoto, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Kazushige Kawasaki, Tokyo, JP;
Hitoshi Sakuma, Tokyo, JP;
Yoshiyuki Suehiro, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A nitride semiconductor device and its manufacturing method are provided which are capable of achieving low-resistance ohmic properties and high adhesion. A nitride semiconductor device has an n-type GaN substrate over which a semiconductor element is formed and an n-electrode as a metal electrode formed over the back surface of the GaN substrate. A surface denatured layer functioning as a carrier supply layer is provided between the GaN substrate and the n-electrode. The surface denatured layer is formed by denaturing the back surface of the GaN substrate by causing it to react with a material that contains silicon.