The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2003
Filed:
Sep. 22, 1999
Takashi Kuroi, Tokyo, JP;
Yasuyoshi Itoh, Tokyo, JP;
Katsuyuki Horita, Tokyo, JP;
Katsuomi Shiozawa, Tokyo, JP;
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Abstract
A semiconductor device and manufacturing method including a MOSFET having a trench-type element isolation structure ( ) formed on a main surface of a semiconductor substrate ( ). A pair of extensions ( ) and source/drain regions ( ) are selectively formed in the main surface so as to face each other through a channel region ( ), a silicon oxide film ( ) is formed on the trench-type element isolation structure ( ) and on the source/drain regions ( ) through a silicon oxide film ( ), sidewalls ( ) are formed on sides of the silicon oxide film ( ), a gate insulating film ( ) is formed on the main surface in a part where the channel region ( ) is formed and a gate electrode ( ) is formed to fill a recessed portion in an inversely tapered shape formed by the sides of the sidewalls ( ) and the upper surface of the gate insulating film ( ).