The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2004
Filed:
Mar. 04, 2003
Applicant:
Inventors:
Assignee:
Renesas Technology Corp., Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/900 ;
U.S. Cl.
CPC ...
H01L 2/900 ;
Abstract
In a trench ( ), an oxynitride film ( ON ) and a silicon oxide film ( O ) are positioned between a doped silicon oxide film ( D) and a substrate ( ), and a silicon oxide film ( O ) is positioned closer to the entrance of the trench ( ) than the doped silicon oxide film ( D). The oxynitride film ( ON ) is formed by a nitridation process utilizing the silicon oxide film ( O ). The vicinity of the entrance of the trench ( ) is occupied by the silicon oxide films ( O O ) and the oxynitride film ( ON ).