The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 16, 2004
Filed:
Aug. 15, 2002
Renesas Technology Corp., Tokyo, JP;
Abstract
A semiconductor device less susceptible to inverse narrow channel effect and its manufacturing method are provided. A silicon nitride film ( ) is adopted as element isolation regions; the silicon nitride film ( ) has a smaller etch rate than a sacrificial silicon oxide film ( ) which serves as a sacrificial layer during ion implantation ( ). This prevents formation of recesses in the silicon nitride film ( ) during the removal of the sacrificial silicon oxide film ( ), which weakens the strength of the electric fields at the gate edges. Weakening the strength of the electric fields at the gate edges suppresses the inverse narrow channel effect, so that the MOS transistor offers a characteristic closer to a characteristic in which the threshold voltage keeps a constant value independently of the channel width. Thus an MOS transistor having a good characteristic can be manufactured.