The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2003
Filed:
Nov. 26, 2001
Applicant:
Inventors:
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1205 ;
U.S. Cl.
CPC ...
H01L 2/1205 ;
Abstract
There is provided a method of forming an element isolation structure that can maintain its element isolation capability even with the progress of miniaturization of semiconductor elements. Through thermal processing in a nitrogen atmosphere at 900° C., a non single-crystal silicon film ( ) is crystallized into single-crystal form by epitaxial growth on the main surface of a substrate, thereby to form an epitaxial silicon film ( ). The epitaxial silicon film ( ) is then planarized by CMP to expose the upper surface of an element isolation insulating film ( ). This completes the element isolation insulating film ( ) having a two-level protruding shape.