Hsinchu, Taiwan

Szu-Wei Huang

This inventor holds 20 USPTO granted patents, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2019-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Szu-Wei Huang. Retrieved from https://idiyas.com/inventor/szu-wei-huang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 3

Forward Citations = 153(Granted Patents)


Company Filing History:


Years Active: 2019-2025

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Areas of Expertise:
Work Function Tuning
Vertical Semiconductor Device
Subthreshold Slope
Threshold Voltage Adjustment
Gate-All-Around Structure
Silicide Induced Modulation
Semiconductor Manufacturing
Semiconductor Device Structure
Semiconductor Wire
Device Manufacturing Method
20 patents (USPTO):Explore Patents

Title: Szu-Wei Huang: Innovator in Semiconductor Technology

Introduction

Szu-Wei Huang is a distinguished inventor based in Hsinchu, Taiwan, with a remarkable portfolio of 19 patents. His work primarily focuses on advancements in semiconductor technology, making significant contributions to the field that enhance device performance and efficiency.

Latest Patents

Among Szu-Wei Huang's latest patents, two noteworthy innovations stand out. The first patent, titled "Effective work function tuning via silicide induced interface dipole modulation for metal gates," describes a semiconductor structure comprising a substrate and a semiconductor channel layer. This structure includes a high-k gate dielectric layer, a work function metal layer, and a bulk metal layer. The configuration of these layers plays a pivotal role in optimizing the work function, which is crucial for improving electronic device efficiency.

The second patent, "Vertical semiconductor device with steep subthreshold slope," involves a semiconductor device featuring first and second source/drain structures, a channel layer, and a gate structure. This design enables superior control of the channel and enhanced performance characteristics, offering innovative solutions in the semiconductor landscape.

Career Highlights

Szu-Wei Huang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading entity in semiconductor foundry services. His role involves groundbreaking research and development that drives the advancement of semiconductor technologies and supports various industries relying on cutting-edge electronic components.

Collaborations

Throughout his career, Szu-Wei Huang has collaborated with esteemed colleagues such as Hung-Li Chiang and I-Sheng Chen. These partnerships have fostered an environment of creativity and innovation, allowing for the exchange of ideas and expertise that propel the field forward.

Conclusion

Szu-Wei Huang exemplifies innovation in semiconductor technology through his patents and collaborative efforts. His work not only enhances existing technologies but also paves the way for future advancements in the industry. With a growing patent portfolio and a commitment to excellence, Huang remains a pivotal figure in the realm of semiconductor research and development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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