The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2020
Filed:
Apr. 22, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hung-Li Chiang, Taipei, TW;
Szu-Wei Huang, Hsinchu, TW;
Chih-Chieh Yeh, Taipei, TW;
Yee-Chia Yeo, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a first source/drain structure, a vertical channel layer, a gate structure, a second source/drain structure and a body epitaxial layer. The first source/drain structure is over the substrate. The vertical channel layer is over the first source/drain structure. The gate structure is on a first sidewall of the vertical channel layer. The second source/drain structure is over the vertical channel layer. The body epitaxial layer is on a second sidewall of the vertical channel layer. The body epitaxial layer and the vertical channel layer are of opposite conductivity types, and the body epitaxial layer is separated from the gate structure.