The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2023
Filed:
May. 26, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Hung-Li Chiang, Taipei, TW;
Szu-Wei Huang, Hsinchu, TW;
Chih-Chieh Yeh, Taipei, TW;
Yee-Chia Yeo, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 23/528 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/823493 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 21/823885 (2013.01); H01L 21/823892 (2013.01); H01L 23/5283 (2013.01); H01L 27/092 (2013.01); H01L 27/0928 (2013.01); H01L 29/0649 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01);
Abstract
A semiconductor device includes first and second source/drain structures, a channel layer, a gate structure, and an epitaxial layer. The channel layer is above the first source/drain structure. The second source/drain structure is above the channel layer. The gate structure is on a first side surface of the channel layer. The epitaxial layer forms a P-N junction with a second side surface of the channel layer.