The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Oct. 18, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
I-Sheng Chen, Taipei, TW;
Szu-Wei Huang, Hsinchu, TW;
Hung-Li Chiang, Taipei, TW;
Cheng-Hsien Wu, Hsinchu, TW;
Chih Chieh Yeh, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes channel layers disposed over a substrate, a source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the channel layers, and a gate electrode layer disposed on the gate dielectric layer and wrapping each of the channel layers. Each of the channel layers includes a semiconductor wire made of a core region, and one or more shell regions. The core region has an approximately square-shape cross section and a first shell of the one or more shells forms a first shell region of an approximately rhombus-shape cross section around the core region and is connected to an adjacent first shell region corresponding to a neighboring semiconductor wire.