The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 26, 2021

Filed:

Nov. 07, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hung-Li Chiang, Taipei, TW;

I-Sheng Chen, Taipei, TW;

Tzu-Chiang Chen, Hsinchu, TW;

Tung-Ying Lee, Hsinchu, TW;

Szu-Wei Huang, Hsinchu, TW;

Huan-Sheng Wei, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/02603 (2013.01); H01L 21/02609 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 29/045 (2013.01);
Abstract

Semiconductor device structures are provided. The semiconductor device structure includes a number of first semiconductor wires over a semiconductor substrate, and the first semiconductor wires are vertically spaced apart from each other. The semiconductor device structure includes a first gate stack partially wrapping the first semiconductor wires, and a spacer element adjacent to the first gate stack. Each of the first semiconductor wires has a first portion directly below the spacer element and a second portion directly below the first gate stack, the first portion has a first width, the second portion has a second width, and the first width is greater than the second width.


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