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For the Inventor, By the Inventor

Singapore, Singapore

Sung Mun Jung

This inventor holds 18 USPTO granted patents and 4 published patent applications, primarily in Integrated Circuits. Top assignees: Globalfoundries Singapore Pte. Ltd., Chartered Semiconductor Manufacturing Ltd (Corporation). Active years: 2008-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sung Mun Jung. Retrieved from https://idiyas.com/inventor/sung-mun-jung-u8nt6737

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 18 

% Patents Active = 66.7

Average Co-Inventor Count = 4.3

ph-index = 3

Forward Citations = 33(Granted Patents)


Company Filing History:

goldMedal15 out of 1,064 
 
Globalfoundries Singapore Pte. Ltd.
 patents
silverMedal3 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents

Years Active: 2008-2019

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Areas of Expertise:
Non-Volatile Memory
Integrated Circuits
High-Voltage MOSFET
Memory Array
EEPROM Cell
Dielectric Stack
Hybrid Access Transistor
Process Integration
Nitride Layer Technology
Guard Ring
Memory Device Integration
18 patents (USPTO):Explore Patents
1. 10170437 - Via disguise to protect the security product from delayering and graphic design system (GDS) hacking and method for producing the same (2019-01-01),
2. 9960172 - Reliable non-volatile memory device (2018-05-01),
3. 9911665 - Integrated circuits, methods of forming the same, and methods of determining gate dielectric layer electrical thickness in integrated circuits (2018-03-06),
4. 9842844 - Contact strap for memory array (2017-12-12),
5. 9431408 - Methods for fabricating integrated circuits with a high-voltage MOSFET (2016-08-30),
6. 9406687 - Integration of memory devices with different voltages (2016-08-02),
7. 9269766 - Guard ring for memory array (2016-02-23),
8. 9054135 - Methods for fabricating integrated circuits with a high-voltage MOSFET (2015-06-09),
9. 8664711 - Dielectric stack (2014-03-04),
10. 8664708 - EEPROM cell (2014-03-04),
11. 8659067 - EEPROM cell (2014-02-25),
12. 8541273 - Dielectric stack (2013-09-24),
13. 8383476 - EEPROM cell (2013-02-26),
14. 8383475 - EEPROM cell (2013-02-26),
15. 8283263 - Integrated circuit system including nitride layer technology (2012-10-09),

Title: Innovations and Contributions of Inventor Sung Mun Jung

Introduction

Sung Mun Jung is a prominent inventor based in Singapore, known for his significant contributions to the field of technology and semiconductor manufacturing. With a total of 18 patents to his name, he has made remarkable advancements in the development of security products and reliable memory devices.

Latest Patents

Among his latest patents, Jung has developed a method for protecting security products from delayering and graphic design system (GDS) hacking. This innovative method involves forming a stop layer to prevent dummy vias from connecting to a metal layer. The process includes several steps, such as forming multiple dielectric layers and metal layers, creating vias, and filling them with a second metal layer. Additionally, he has patented a reliable non-volatile memory device, which includes a unique method for forming memory cells with split gates and re-oxidized layers, enhancing the performance and reliability of memory devices.

Career Highlights

Sung Mun Jung has worked with notable companies in the semiconductor industry, including Globalfoundries Singapore Pte. Ltd. and Chartered Semiconductor Manufacturing Ltd. His experience in these organizations has contributed to his expertise in developing cutting-edge technologies.

Collaborations

Throughout his career, Jung has collaborated with esteemed colleagues such as Jianbo Yang and Swee Tuck Woo, further enriching his work and innovations in the field.

Conclusion

Sung Mun Jung's contributions to technology and semiconductor manufacturing are noteworthy, showcasing his innovative spirit and dedication to advancing the industry. His patents reflect a deep understanding of complex systems and a commitment to enhancing device reliability and security.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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