The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Sep. 23, 2010
Sung Mun Jung, Singapore, SG;
Kian Hong Lim, Singapore, SG;
Jianbo Yang, Singapore, SG;
Swee Tuck Woo, Singapore, SG;
Sanford Chu, Singapore, SG;
Sung Mun Jung, Singapore, SG;
Kian Hong Lim, Singapore, SG;
Jianbo Yang, Singapore, SG;
Swee Tuck Woo, Singapore, SG;
Sanford Chu, Singapore, SG;
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Abstract
A method of forming a device is disclosed. The method includes providing a substrate prepared with a cell area separated by other active areas by isolation regions. First and second gates of first and second transistors in the cell area are formed. The first gate includes first and second sub-gates separated by a first intergate dielectric layer. The second gate includes a second sub-gate surrounding a first sub-gate. The first and second sub-gates of the second gate are separated by a second intergate dielectric layer. First and second junctions of the first and second transistors are formed. The method also includes forming a first gate terminal coupled to the second sub-gate of the first transistor and a second gate terminal coupled to at least the first sub-gate of the second transistor.