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For the Inventor, By the Inventor

Jiangsu, China

Siyang Liu

This inventor holds 17 USPTO granted patents and 6 published patent applications and 1 EPO patent. Top assignees: Southeast University, Csmc Technologies Fab2 Co., Ltd.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Siyang Liu. Retrieved from https://idiyas.com/inventor/siyang-liu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 17 

% Patents Active = 94.1

 

Average Co-Inventor Count = 7.5

ph-index = 1

Forward Citations = 194(Granted Patents)


Location History:

  • Jiangsu, CN (2015 - 2022)
  • Nanjing, CN (2018 - 2024)
  • Wuxi, CN (2019 - 2024)

Company Filing History:

goldMedal18 out of 408 
 
Southeast University
 patents
silverMedal5 out of 139 
 
Csmc Technologies Fab2 Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2015-2026

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17 patents (USPTO):Explore Patents
1. 12622009 - DMOS device having junction field plate and manufacturing method therefor (2026-05-05),
2. 12382707 - Conductive channel structure for SiC devices, fully integrated SiC device and fully integrated manufacturing process thereof (2025-08-05),
3. 12366614 - Horizontal hall device and preparation method (2025-07-22),
4. 12224340 - Heterojunction semiconductor device with low on-resistance (2025-02-11),
5. 12183818 - Power semiconductor device and manufacturing method therefor (2024-12-31),
6. 12107167 - High-threshold power semiconductor device and manufacturing method thereof (2024-10-01),
7. 12051742 - Enhancement-mode N-channel and P-channel GaN device integration structure (2024-07-30),
8. 12046594 - Monolithically integrated GaN-based half-bridge circuit and half-bridge circuit (2024-07-23),
9. 12027516 - GaN power semiconductor device integrated with self-feedback gate control structure (2024-07-02),
10. 11894458 - Lateral double-diffused metal oxide semiconductor field effect transistor (2024-02-06),
11. 11515395 - Gallium nitride power device and manufacturing method thereof (2022-11-29),
12. 11322606 - Heterojunction semiconductor device having high blocking capability (2022-05-03),
13. 11158708 - Graphene channel silicon carbide power semiconductor transistor (2021-10-26),
14. 10340906 - Integrated bootstrap high-voltage driver chip and technological structure thereof (2019-07-02),
15. 10056313 - Power module of square flat pin-free packaging structure (2018-08-21),

Title: Siyang Liu: Pioneering Inventor from Jiangsu, CN

Introduction: Siyang Liu is a distinguished inventor hailing from Jiangsu, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Siyang Liu holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for the future.

Career Highlights: With a career spanning over two decades, Siyang Liu has worked with leading research institutions and technology companies, playing a pivotal role in developing cutting-edge products and systems.

Collaborations: Siyang Liu has collaborated with top universities and multinational corporations on various projects, fostering a culture of innovation and knowledge-sharing within the industry.

Conclusion: Siyang Liu's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and researchers worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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