IDiyas

For the Inventor, By the Inventor

Jiangsu, China

Siyang Liu

USPTO Granted Patents = 16 

 

Average Co-Inventor Count = 7.5

ph-index = 1

Forward Citations = 194(Granted Patents)


Location History:

  • Jiangsu, CN (2015 - 2022)
  • Nanjing, CN (2018 - 2024)
  • Wuxi, CN (2019 - 2024)

Company Filing History:

goldMedal17 out of 370 
 
Southeast University
 patents
silverMedal4 out of 139 
 
Csmc Technologies Fab2 Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2015-2025

where 'Filed Patents' based on already Granted Patents

16 patents (USPTO):
1. 12382707 - Conductive channel structure for SiC devices, fully integrated SiC device and fully integrated manufacturing process thereof (2025-08-05),
2. 12366614 - Horizontal hall device and preparation method (2025-07-22),
3. 12224340 - Heterojunction semiconductor device with low on-resistance (2025-02-11),
4. 12183818 - Power semiconductor device and manufacturing method therefor (2024-12-31),
5. 12107167 - High-threshold power semiconductor device and manufacturing method thereof (2024-10-01),
6. 12051742 - Enhancement-mode N-channel and P-channel GaN device integration structure (2024-07-30),
7. 12046594 - Monolithically integrated GaN-based half-bridge circuit and half-bridge circuit (2024-07-23),
8. 12027516 - GaN power semiconductor device integrated with self-feedback gate control structure (2024-07-02),
9. 11894458 - Lateral double-diffused metal oxide semiconductor field effect transistor (2024-02-06),
10. 11515395 - Gallium nitride power device and manufacturing method thereof (2022-11-29),
11. 11322606 - Heterojunction semiconductor device having high blocking capability (2022-05-03),
12. 11158708 - Graphene channel silicon carbide power semiconductor transistor (2021-10-26),
13. 10340906 - Integrated bootstrap high-voltage driver chip and technological structure thereof (2019-07-02),
14. 10056313 - Power module of square flat pin-free packaging structure (2018-08-21),
15. 9240469 - Transverse ultra-thin insulated gate bipolar transistor having high current density (2016-01-19),

Title: Siyang Liu: Pioneering Inventor from Jiangsu, CN

Introduction: Siyang Liu is a distinguished inventor hailing from Jiangsu, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Siyang Liu holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating solutions for the future.

Career Highlights: With a career spanning over two decades, Siyang Liu has worked with leading research institutions and technology companies, playing a pivotal role in developing cutting-edge products and systems.

Collaborations: Siyang Liu has collaborated with top universities and multinational corporations on various projects, fostering a culture of innovation and knowledge-sharing within the industry.

Conclusion: Siyang Liu's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and researchers worldwide.

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