The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2022
Filed:
Oct. 21, 2019
Southeast University, Nanjing, CN;
Weifeng Sun, Nanjing, CN;
Siyang Liu, Nanjing, CN;
Sheng Li, Nanjing, CN;
Chi Zhang, Nanjing, CN;
Xinyi Tao, Nanjing, CN;
Ningbo Li, Nanjing, CN;
Longxing Shi, Nanjing, CN;
SOUTHEAST UNIVERSITY, Nanjing, CN;
Abstract
A heterojunction semiconductor device comprises a substrate; a second barrier layer is disposed on the second channel layer and a second channel is formed; a trench gate structure is disposed in the second barrier layer; the trench gate structure is embedded into the second barrier layer and is composed of a gate medium and a gate metal located in the gate medium; an isolation layer is disposed in the second channel layer and separates the second channel layer into an upper layer and a lower layer; a first barrier layer is disposed between the lower layer of the second channel layer and the first channel layer and a first channel is formed; a bottom of the metal drain is flush with a bottom of the first barrier layer; and a first metal source is disposed between the second metal source and the first channel layer.