The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2025
Filed:
Dec. 19, 2019
Southeast University, Nanjing, CN;
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
Siyang Liu, Wuxi, CN;
Chi Zhang, Wuxi, CN;
Kui Xiao, Wuxi, CN;
Guipeng Sun, Wuxi, CN;
Dejin Wang, Wuxi, CN;
Jiaxing Wei, Wuxi, CN;
Li Lu, Wuxi, CN;
Weifeng Sun, Wuxi, CN;
Shengli Lu, Wuxi, CN;
SOUTHEAST UNIVERSITY, Nanjing, CN;
CSMC TECHNOLOGIES FAB2 CO., LTD., Wuxi, CN;
Abstract
A heterojunction semiconductor device with a low on-resistance includes a metal drain electrode, a substrate, and a buffer layer. A current blocking layer is arranged in the buffer layer, a gate structure is arranged on the buffer layer, and the gate structure comprises a metal gate electrode, GaN pillars and AlGaN layers, wherein a metal source electrode is arranged above the metal gate electrode; and the current blocking layer comprises multiple levels of current blocking layers, the centers of symmetry of the layers are collinear, and annular inner openings of the current blocking layers at all levels gradually become smaller from top to bottom. The AlGaN layers and the GaN pillars are distributed in a honeycomb above the buffer layer.