The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2024
Filed:
Dec. 23, 2019
Southeast University, Nanjing, CN;
Csmc Technologies Fab2 Co., Ltd., Wuxi, CN;
Weifeng Sun, Wuxi, CN;
Rongcheng Lou, Wuxi, CN;
Kui Xiao, Wuxi, CN;
Feng Lin, Wuxi, CN;
Jiaxing Wei, Wuxi, CN;
Sheng Li, Wuxi, CN;
Siyang Liu, Wuxi, CN;
Shengli Lu, Wuxi, CN;
Longxing Shi, Wuxi, CN;
Abstract
A power semiconductor device includes: a substrate; drain metal; a drift region; a base region; a gate structure; a first conductive type doped region contacting the base region on the side of the base region distant from the gate structure; a source region provided in the base region and between the first conductive type doped region and the gate structure; contact metal that is provided on the first conductive type doped region and forms a contact barrier having rectifying characteristics together with the first conductive type doped region below; and source metal wrapping the contact metal and contacting the source region.