The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2019
Filed:
Jan. 23, 2017
Southeast University, Wuxi, CN;
Southeast University-wuxi Integrated Circuit Technology Research Institute, Wuxi, CN;
Weifeng Sun, Wuxi, CN;
Yunwu Zhang, Wuxi, CN;
Kuo Yu, Wuxi, CN;
Jing Zhu, Wuxi, CN;
Shen Xu, Wuxi, CN;
Qinsong Qian, Wuxi, CN;
Siyang Liu, Wuxi, CN;
Shengli Lu, Wuxi, CN;
Longxing Shi, Wuxi, CN;
Abstract
Parasitic high-voltage diodes implemented by integration technology in a high-voltage level shift circuit are used for charging a bootstrap capacitor C, wherein a power supply end of the high voltage level shift circuit is a high-side floating power supply VB, and a reference ground is a floating voltage PGD that is controlled by a bootstrap control circuit. A first parasitic diode Dand a second parasitic diode Dare provided between the VB and the PGD. The bootstrap control circuit is controlled by a high-side signal and a low-side signal.